Qualcomm, Inc. Snapdragon Auto, Snapdragon Consumer IOT, Snapdragon Industrial IOT, Snapdragon Mobile, Snapdragon Wearables

CVE-2018-13888
HIGH 7.8

En bref

Source
NVD
EPSS
EPSS 0.23 % · centile 14 ()
État
PUBLISHED
Publiée
Mise à jour
Attribuée par
qualcomm
Statut NVD
Modified

Description

There is potential for memory corruption in the RIL daemon due to de reference of memory outside the allocated array length in RIL in Snapdragon Auto, Snapdragon Consumer IOT, Snapdragon Industrial IOT, Snapdragon Mobile, Snapdragon Wearables in versions MDM9206, MDM9607, MDM9635M, MDM9650, MSM8909W, SD 210/SD 212/SD 205, SD 425, SD 427, SD 430, SD 435, SD 439 / SD 429, SD 450, SD 625, SD 636, SD 650/52, SD 675, SD 712 / SD 710 / SD 670, SD 820A, SD 835, SD 845 / SD 850, SD 855, SDM439, SDM630, SDM660, ZZ_QCS605.

Faiblesses (CWE)

  • CWE-119 — Opération hors des limites d'un tampon mémoire

Références

Scores

VersionScoreVecteurÉvalué par
CVSS 3.0HIGH 7.8CVSS:3.0/AV:L/AC:L/PR:L/UI:N/S:U/C:H/I:H/A:HNVD · nvd@nist.gov (Primary)
CVSS 2.0HIGH 7.2AV:L/AC:L/Au:N/C:C/I:C/A:CNVD · nvd@nist.gov (Primary)

Références européennes

Avis du CERT-FR

Configurations affectées (CPE NVD)

Produits affectés

ProduitVersions
Qualcomm, Inc. · Snapdragon Auto, Snapdragon Consumer IOT, Snapdragon Industrial IOT, Snapdragon Mobile, Snapdragon Wearablesaffected MDM9206, MDM9607, MDM9635M, MDM9650, MSM8909W, SD 210/SD 212/SD 205, SD 425, SD 427, SD 430, SD 435, SD 439 / SD 429, SD 450, SD 625, SD 636, SD 650/52, SD 675, SD 712 / SD 710 / SD 670, SD 820A, SD 835, SD 845 / SD 850, SD 855, SDM439, SDM630, SDM660, ZZ_QCS605

Sources

SourceLicence
CVE List (CVEProject cvelistV5)CVE Program Terms of Use
EPSS (FIRST.org)FIRST — attribution requested
ENISA EUVDENISA — reproduction authorised, source acknowledged
CERT-FR (ANSSI)Licence Ouverte / Etalab 2.0
NVD (NIST) via fkie-cad/nvd-json-data-feedsPublic domain — this product uses data from the NVD API but is not endorsed or certified by the NVD